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APT68GA60LD40 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT68GA60LD40 poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode) (R) FEATURES * Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant TYPICAL APPLICATIONS * ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Gate-Emitter Voltage 2 Ratings 600 121 68 202 30 520 202A @ 600V -55 to 150 300 Unit V A V W Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25C unless otherwise specified Test Conditions VGE = 0V, IC = 250A VGE = 15V, IC = 40A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Min 600 Typ 2.0 1.9 4.5 Max 2.5 6 275 3000 100 Unit V VGE =VCE , IC = 1mA A 6 - 2009 052-6341 Rev D VGS = 30V nA Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on) tr td(off) tf Eon2 Eoff6 TJ = 25C unless otherwise specified Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 40A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 40A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 40A RG = 4.74 TJ = +125C 21 27 202 APT68GA60LD40 Min Typ 5230 526 59 198 32 66 nC pF Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Max Unit A 133 88 715 607 20 26 175 129 1117 1025 ns J ns J Thermal and Mechanical Characteristics Symbol RJC RJC WT Torque Characteristic Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight Mounting Torque (TO-264 Package), 4-40 or M3 screw Min - Typ - Max .24 .67 Unit C/W g in*lbf - 6.1 10 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6341 Rev D 6 - 2009 Typical Performance Curves 120 100 80 60 40 20 0 V GE APT68GA60LD40 350 TJ= 125C TJ= 150C IC, COLLECTOR CURRENT (A) 300 250 9V 200 150 100 50 0 8V 15V 13V 10V = 15V IC, COLLECTOR CURRENT (A) TJ= 55C TJ= 25C 7V 6V 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C) I = 40A C T = 25C J 0 1 2 3 4 5 6 240 200 160 120 80 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 20 IC, COLLECTOR CURRENT (A) 15 VCE = 120V 10 VCE = 300V VCE = 480V 5 TJ= 25C 40 TJ= 125C 0 0 2 4 6 TJ= -55C 8 10 12 0 0 40 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 80 120 160 GATE CHARGE (nC) FIGURE 4, Gate charge 200 5 3 4 IC = 80A IC = 40A 3 IC = 80A IC = 40A 2 IC = 20A 1 2 1 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 20A 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.15 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 140 120 0 0 25 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 IC, DC COLLECTOR CURRENT (A) 100 80 6 - 2009 25 50 052-6341 Rev D 60 40 20 0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature -50 -25 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature Typical Performance Curves 30 25 20 15 10 5 0 VGE = 15V td(OFF), TURN-OFF DELAY TIME (ns) VCE = 400V TJ = 25C, or 125C RG = 4.7 L = 100H 250 APT68GA60LD40 td(ON), TURN-ON DELAY TIME (ns) 200 VGE =15V,TJ=125C 150 100 VGE =15V,TJ=25C 50 VCE = 400V RG = 4.7 L = 100H 0 20 40 60 80 0 0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 RG = 4.7, L = 100H, VCE = 400V 60 50 tr, RISE TIME (ns) 40 30 20 10 0 TJ = 25 or 125C,VGE = 15V ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140 120 tr, FALL TIME (ns) 100 80 60 40 20 RG = 4.7, L = 100H, VCE = 400V TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V 0 10 20 30 40 50 60 70 80 0 0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J) V = 400V CE V = +15V GE R =4.7 G ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3000 2500 2000 TJ = 125C V = 400V CE V = +15V GE R = 4.7 G 2000 TJ = 125C 1500 1000 500 0 TJ = 25C 1000 TJ = 25C 0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J) 7000 6000 5000 4000 3000 Eon2,40A Eoff,80A V = 400V CE V = +15V GE T = 125C J 0 0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 3000 V = 400V CE V = +15V GE R = 4.7 G Eon2,80A SWITCHING ENERGY LOSSES (J) Eon2,80A Eoff,80A 2500 2000 1500 6 - 2009 Eon2,40A 1000 500 0 2000 Eoff,40A Eoff,40A Eon2,20A Eoff,20A 052-6341 Rev D 1000 0 0 Eon2,20A Eoff,20A 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 Typical Performance Curves 10000 Cies IC, COLLECTOR CURRENT (A) 1000 APT68GA60LD40 C, CAPACITANCE (pF) 100 1000 Coes 100 Cres 10 10 1 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area 0.1 0.30 ZJC, THERMAL IMPEDANCE (C/W) 0.25 D = 0.9 0.20 0.7 0.15 0.10 0.05 0 10 -5 0.5 0.3 0.1 0.05 10-4 SINGLE PULSE 10-3 10-2 Note: PDM t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 052-6341 Rev D 6 - 2009 APT68GA60LD40 10% Gate Voltage td(on) 90% tr V CC IC V CE TJ = 125C APT30DQ60 Collector Current 5% Collector Voltage 5% 10% Switching Energy A D.U.T. Figure 20, Inductive Switching Test Circuit Figure 21, Turn-on Switching Waveforms and Definitions 90% td(off) TJ = 125C Gate Voltage Collector Voltage tf 10% 0 Collector Current Switching Energy Figure 22, Turn-off Switching Waveforms and Definitions 052-6341 Rev D 6 - 2009 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 111C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms) All Ratings: TC = 25C unless otherwise specified. APT68GA60LD40 40 63 320 Amps Unit STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 40A VF Forward Voltage IF = 80A IF = 40A, TJ = 125C Min Type 2.0 2.5 1.7 Max Unit Volts DYNAMIC CHARACTERISTICS Symbol Characteristic trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current 0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.40 0.5 0.30 PDM t1 t2 Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 40A, diF/dt = -200A/s VR = 400V, TC = 25C Min - Typ 22 25 35 3 160 480 6 85 920 20 Max - Unit ns nC Amps ns nC Amps ns nC Amps IF = 40A, diF/dt = -200A/s VR = 400V, TC = 125C - IF = 40A, diF/dt = -1000A/s VR = 400V, TC = 125C - D = 0.9 0.7 Note: 0.20 0.10 0 10-5 0.3 0.1 0.05 10-4 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION l 052-6341 Rev D 6 - 2009 Dynamic Characteristics 120 TJ = 25C unless otherwise specified 180 trr, REVERSE RECOVERY TIME (ns) 160 140 40A 120 80A APT68GA60LD40 T = 125C J V = 400V R IF, FORWARD CURRENT (A) 100 80 60 TJ = 125C 40 20 0 TJ = 175C TJ = 25C TJ = -55C 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 1400 0 20A 100 80 60 40 20 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25 T = 125C J V = 400V R 0 Qrr, REVERSE RECOVERY CHARGE (nC) T = 125C J V = 400V R 1200 80A 1000 800 600 400 20A 200 0 80A 20 15 40A 10 20A 5 40A 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.4 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 1.0 IRRM 0.8 0.6 trr 0.4 0.2 0.0 Qrr trr Qrr 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 80 70 60 IF(AV) (A) 50 40 30 20 10 Duty cycle = 0.5 T = 175C J 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 200 180 CJ, JUNCTION CAPACITANCE (pF) 160 140 120 100 80 60 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1 0 75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 25 50 052-6341 Rev D 6 - 2009 Dynamic Characteristics TJ = 25C unless otherwise specified Vr APT68GA60LD40 +18V 0V diF /dt Adjust D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 0.25 IRRM trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector (Cathode) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Collector (Cathode) Emitter (Anode) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. 052-6341 Rev D 6 - 2009 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) |
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